Method of manufacturing vertical-cavity surface emitting laser and vertical-cavity surface emitting laser array

ABSTRACT

A method of manufacturing a surface emitting laser element of a vertical cavity type in accordance with the present invention is characterized in that comprises the following steps of: applying a process of accumulations on a substrate, the process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to the substrate, and accumulating layers of a semiconductor as a plurality thereof on to the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of the first layer of the dielectric substance at a part of regions on the contact layer; forming an electrode of an annular shape as a process of a formation of the electrode of the annular shape on the contact layer, that has an open part at a center thereof, in order to be arranged for the first layer of the dielectric substance at an inner side of the open part thereat; forming a second layer of a dielectric substance as a process of a formation of the second layer of the dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape; and etching the layers of the semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of the mesa post with making use of the electrode of the annular shape to be as a mask therefor.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing a surface emitting laser element of a vertical cavity type and relates to the surface emitting laser element of the vertical cavity type.

2. Description of the Related Art

As a surface emitting laser element of a conventional type, there are disclosed the surface emitting laser elements of the vertical cavity type in which there are individually designed to be accumulated the layers of the semiconductor as a plurality thereof, that individually comprise each of the active layers between the corresponding reflecting mirror of the multilayered film layers at the upper side thereof and the corresponding reflecting mirror of the multilayered film layers at the lower side thereof that individually configure each of the distributed Bragg reflector (DBR) mirrors respectively (refer to both of the following Patent Document 1 and Patent Document 2). Moreover, each of such the surface emitting laser elements of the vertical cavity type that are individually disclosed in Patent Document 1 and Patent Document 2 has the structure of the mesa post and has the electrical current narrowing layer in order to control the electrical current path therethrough and to enhance the efficiency of the electrical current injection thereinto as well. Further, each of such the electrical current narrowing layers therein comprises the electrical current narrowing part that is located at the outer circumference thereof and that is formed of the Al₂O₃ respectively, and the same comprises the electrical current injection part of a round shape that is located at the center of each of such the electrical current narrowing parts and that is formed of the AlAs as well respectively. Still further, there is designed for each of such the electrical current injection parts therein to be as the electrical current path in the case where there is injected the electrical current into such the surface emitting laser element of the vertical cavity type respectively, and there is designed therefor to be the open part in order to perform the outgoing of the laser beam therefrom as well respectively.

Still further, each of such the surface emitting laser elements of the vertical cavity type that are individually disclosed in Patent Document 1 and Patent Document 2 has the layer for the electrical current path that has the resistance as lower and that is formed of the semiconductor as a (p⁺) type at each of the corresponding predetermined locations for each of the corresponding top layers among the layers of the semiconductor as a plurality thereof and for between each of such the corresponding top layers thereof and each of the corresponding electrical current narrowing layers respectively, in order to perform the injection of the electrical current thereinto as efficiently from each of the corresponding electrodes of the annular shape at the (p) side thereof respectively. And then there is designed for the electrical current that is injected from the electrode of the annular shape at the (p) side thereof to be injected into the active layer as efficiently via the electrical current narrowing layer by passing through such the corresponding layers for the electrical current path as each of the corresponding electrical current paths respectively. As a result, it is able to reduce the threshold electrical current for emission from each of such the surface emitting laser elements of the vertical cavity type. Still further, there is designed for each of such the layers for the electrical current path at each of the top layers of the layers of the semiconductor to function as the contact layer that corresponds to each of the corresponding electrodes of the annular shape at the (p) side thereof as well respectively, and then thereby referring to as the contact layer hereinafter.

Here it is required for a light that has a predetermined wavelength for a laser oscillation to form a standing wave at between a reflecting mirror of a multilayered film layer at an upper side thereof and a reflecting mirror of a multilayered film layer at a lower side thereof in accordance with a surface emitting laser elements of a vertical cavity type. And then in a case where there is designed for such the standing wave to be formed therein, there becomes to be a location as a loop for such the standing wave at a top surface of the reflecting mirror of the multilayered film layer at the lower side thereof and also at a bottom surface of the reflecting mirror of the multilayered film layer at the upper side thereof. Still further, there are designed for the electrical current narrowing layer and for the contact layer and for the layer for the electrical current path, that are described above, to be the individual layers for which there are performed the designing of higher priority regarding each of the electrical characteristics respectively. And then thereby becoming an occurrence of absorbing and/or of scattering a laser beam to be emitted therefrom. And hence it is desirable for the electrical current narrowing layer and for the contact layer and for the layer for the electrical current path thereby being designed to be arranged at a location as a node for a standing wave of a light respectively. And therefore there is designed for the surface emitting laser element of the conventional type to be performed the control of the thickness of each of the layers therein and the index of refraction as well, in order to realize each of the locations of the loop and the node for the standing wave of the light that are described above.

Still further, each of such the surface emitting laser elements of the vertical cavity type that are individually disclosed in Patent Document 1 and Patent Document 2 comprises the layer for the phase adjustment which is so called the re-phase layer on the surface of the contact layer at the inner side of the open part of the electrode of the annular shape at the (p) side thereof respectively. Still further, there is designed for each of such the layers for the phase adjustment to be formed of the dielectric substance respectively, such as the silicon nitride or the like, and then there is designed therefor to be inserted into between each of the corresponding contact layers and each of the corresponding bottom surfaces of the reflecting mirrors of the multilayered film layers at the upper side thereof respectively. Furthermore, there is designed therefor to have the optical thickness to be performed the adjustment therefor to be as approximately λ/4, in order to locate each of the corresponding contact layers at the node of the standing wave respectively, and in order to locate each of the corresponding bottom surfaces of the reflecting mirrors of the multilayered film layers at the upper side thereof at the loop of the standing wave respectively. And here an optical thickness of a layer is expressed by a product of a layer thickness of such the layer and a index of refraction of such the layer.

[Patent Document 1] The U.S. Pat. No. 6,916,672

[Patent Document 2] The U.S. Pat. No. 6,750,071

However, when the present inventors manufacture such the surface emitting laser element of the vertical cavity type that has the conventional configuration, it is found out that there is a problem that the threshold electrical current for emission therefrom becomes to be increased comparing to the value of the designing therefor. And then when the present inventors examine closely such the surface emitting laser element of the vertical cavity type that is manufactured, it is found out that the resistance of such the element becomes to be increased due to the following causes.

Here FIG. 10 is a cross sectional view for exemplary showing a principal part of a surface emitting laser element of a vertical cavity type that has a conventional configuration. And as shown in FIG. 10, such a surface emitting laser element of a vertical cavity type (300) comprises a configuration of: an electrical current narrowing layer (307) that comprises an electrical current narrowing part (307 a) which is designed to be located at an outer circumference thereof, and an electrical current injection part (307 b) of a round shape which is designed to be located at a center of such the electrical current narrowing part (307 a); a spacer layer of a (p) type (309); a layer for an electrical current path of a (p⁺) type (310); another spacer layer of a (p) type (311); and a contact layer of a (p⁺) type (312), that are accumulated in order one after the other thereunto. Moreover, there is designed for an electrode of an annular shape at a (p) side thereof (313) to be formed on the contact layer of the (p⁺) type (312), and meanwhile, there is designed for a layer for a phase adjustment (314) as a disk shape to be formed of a silicon nitride at an inner side of an open part of the electrode of the annular shape at the (p) side thereof (313) as well. Further, there is designed for a DBR mirror at an upper side thereof (316) to be formed on to the electrode of the annular shape at the (p) side thereof (313) and on to the layer for the phase adjustment (314), and there is designed therefor to be comprised of a multilayered film layer of a dielectric substance. Still further, there is designed for an active layer to be located at a lower part of the electrical current narrowing layer (307). Furthermore, there is designed for each of at least from such the active layer through the contact layer of the (p⁺) type (312) to have a configuration of mesa post as a post shape respectively.

And then in accordance with the finding out by the present inventors, there is formed a gap (321) that has a width of approximately between 0.3 μm and 0.5 μm for all over an outer circumference of the layer for the phase adjustment (314) at between such the outer circumference of the layer for the phase adjustment (314) and an internal circumference of the electrode of the annular shape at the (p) side thereof (313) regarding the surface emitting laser element of the vertical cavity type (300) that has the conventional configuration. Moreover, it is found out that there is formed a gutter (324) on the contract layer of the (p⁺) type (312) at a part as directly under such the gap (321). And then when the present inventors further examine as more closely regarding such the surface emitting laser element, it is found out that such the gutter (324) becomes to be formed at a process of performing the formation of the mesa post in such the surface emitting laser element of the vertical cavity type (300) due to a trespass of an etching reagent into between the outer circumference of the layer for the phase adjustment (314) and the internal circumference of the electrode of the annular shape at the (p) side thereof (313) and then due to an occurrence of erosion for such the contract layer of the (p⁺) type (312). Moreover, in such a case where there is formed such the gutter (324) thereon, such the contract layer of the (p⁺) type (312) becomes to have a layer thickness as thinner at such the part thereof or the same comes to a rupture thereat, and then thereby becoming higher for the electrical resistance thereof. As a result, the electrical current which is injected from the electrode of the annular shape at the (p) side thereof (313) becomes to flow in a direction to a face in the electrical current path of the (p⁺) type (310) as arrowed with making use of an (Ar3) therein in place of flowing in a direction to the contract layer of the (p⁺) type (312). And then thereby being considered that there becomes to be increased the resistance of such the element.

And therefore the present invention is provided with having a regard to the description as above, and an objective thereof is to provide a method of manufacturing a surface emitting laser element of a vertical cavity type and is to provide the surface emitting laser element of the vertical cavity type in which there is designed for a threshold electrical current for emission therefrom to be as lower.

SUMMARY OF THE INVENTION

In order to solve the subject which is mentioned above and in order to accomplish the objective therefor, according to a first aspect of the present invention, a method of manufacturing a surface emitting laser element of a vertical cavity type, comprises the steps of: applying a process of accumulations on a substrate, the process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to the substrate, and accumulating layers of a semiconductor as a plurality thereof on to the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of the first layer of the dielectric substance at a part of regions on the contact layer; forming an electrode of an annular shape as a process of a formation of the electrode of the annular shape on the contact layer, that has an open part at a center thereof, in order to be arranged for the first layer of the dielectric substance at an inner side of the open part thereat; forming a second layer of a dielectric substance as a process of a formation of the second layer of the dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape; and etching the layers of the semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of the mesa post with making use of the electrode of the annular shape to be as a mask therefor.

Moreover, according to a second aspect of the present invention, the method of manufacturing the surface emitting laser element of the vertical cavity type in the first aspect comprises the additional step of: forming a reflecting mirror of a multilayered film layer at an upper side thereof on to the second layer of the dielectric substance, that is formed of a dielectric substance, as a process of a formation of the reflecting mirror of the multilayered film layer at the upper side thereof after performing the process of the formation of the mesa post, in which there is designed for the first layer of the dielectric substance and for the second layer of the dielectric substance to be formed so that have an optical thickness in total thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ) in accordance with the process of the formation of the first layer of the dielectric substance and with the process of the formation of the second layer of the dielectric substance.

Further, according to a third aspect of the present invention, the method of manufacturing the surface emitting laser element of the vertical cavity type in the first aspect comprises the additional step of: forming a reflecting mirror of a multilayered film layer at an upper side thereof as a process of a formation of the reflecting mirror of the multilayered film layer at the upper side thereof by performing an accumulation of the multilayered film layer at the upper side thereof, that is formed of a dielectric substance, that is comprised of the multilayered film layer at the upper side thereof and the second layer of the dielectric substance, and that there is designed for a layer of a dielectric substance at an upper side thereof to be as a bottom layer, on to the second layer of the dielectric substance after performing the process of the formation of the mesa post, wherein there is designed for the first layer of the dielectric substance in accordance with the process of the formation of the first layer of the dielectric substance to be formed so that comprises a multilayered structure of a layer of a dielectric substance at a lower side thereof and the layer of the dielectric substance at the upper side thereof, and so that there is designed for the dielectric substance at the lower side thereof to have an optical thickness thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ).

Still further, according to a fourth aspect of the present invention, the method of manufacturing the surface emitting laser element of the vertical cavity type in any one of the first to the third aspects is characterized in that the process of the accumulations includes a process of an accumulation of a layer to be oxidized in order to accumulate the layer to be oxidized that is formed of an AlAs or an Al_(1-x)Ga_(x)As (0<x<1) for between the contact layer and the active layer, and the same includes a process of a formation of an electrical current narrowing layer in order to form the electrical current narrowing layer that comprises an electrical current injection part which is formed of the AlAs or the Al_(1-x)Ga_(x)As and that comprises an electrical current narrowing part which is formed of an Al₂O₃ or an (Al_(1-x)Ga_(x))₂O₃, by performing a process of a selective oxidizing heat treatment for the layer to be oxidized that is performed the accumulation, after performing the process of the formation of the mesa post.

Still further, according to a fifth aspect of the present invention, the method of manufacturing the surface emitting laser element of the vertical cavity type in the fourth aspect is characterized in that the process of the accumulations includes a process of an accumulation of a layer for an electrical current path in order to accumulate the layer for the electrical current path between the contact layer and the layer to be oxidized, that has a concentration of an acceptor which is approximately equivalent to that in the contact layer.

Still further, according to a sixth aspect of the present invention, the method of manufacturing the surface emitting laser element of the vertical cavity type according to in any one of the first to the third aspects is characterized in that at least a part of the first layer of the dielectric substance that is contacting to the contact layer is formed of a silicon nitride which has a composition ratio of nitrogen to be higher comparing to a stoichiometric composition.

Still further, according to a seventh aspect of the present invention, a surface emitting laser element of the vertical cavity type comprises: a substrate; a reflecting mirror of a multilayered film layer at a lower side thereof that is accumulated on the substrate; layers of a semiconductor as a plurality thereof, that are accumulated on the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises a structure of a mesa post, and that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; an electrode of an annular shape that is formed on the contact layer, that has an open part at a center thereof, and that has an outer circumference which corresponds to an outer circumference of the structure of the mesa post; a first layer of a dielectric substance at an inner side of the open part of the electrode of the annular shape on the contact layer; and a second layer of a dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape.

Still further, according to an eighth aspect of the present invention, the surface emitting laser element of the vertical cavity type in the seventh aspect further comprises: a reflecting mirror of a multilayered film layer at an upper side thereof, that is formed on the second layer of the dielectric substance, and that is formed of a dielectric substance, wherein there is designed for the first layer of the dielectric substance and for the second layer of the dielectric substance to have an optical thickness in total thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ).

Still further, according to a ninth aspect of the present invention, the surface emitting laser element of the vertical cavity type in the seventh aspect further comprises: a multilayered film layer at an upper side thereof, that is formed on the second layer of the dielectric substance, and that is formed of a dielectric substance, wherein there is designed for the first layer of the dielectric substance to comprise a multilayered structure of a layer of a dielectric substance at a lower side thereof and a layer of a dielectric substance at an upper side thereof, and there is designed for the layer of the dielectric substance at the lower side thereof to have an optical thickness thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ), and the multilayered film layer at the upper side thereof and the second layer of the dielectric substance and the layer of the dielectric substance at the upper side thereof configure a reflecting mirror of a multilayered film layer at an upper side thereof, in which there is designed for the layer of the dielectric substance at the upper side thereof to be as a bottom layer therein.

Still further, according to a tenth aspect of the present invention, the surface emitting laser element of the vertical cavity type in any one of the seventh to the ninth aspects is characterized in that there is designed for the layers of the semiconductor as a plurality thereof to provide an electrical current narrowing layer that comprises an electrical current injection part which is formed of an AlAs or an Al_(1-x)Ga_(x)As (0<x<1) and that comprises an electrical current narrowing part which is formed of an Al₂O₃ or an (Al_(1-x)Ga_(x))₂O₃, that are formed by performing a process of a selective oxidizing heat treatment for between the active layer and the contact layer.

Still further, according to an eleventh aspect of the present invention, the surface emitting laser element of said vertical cavity type in the tenth aspect is characterized in that there is designed for the layers of the semiconductor as a plurality thereof to provide a layer for an electrical current path between the electrical current narrowing layer and the contact layer, that has a concentration of an acceptor which is approximately equivalent to that in the contact layer.

Still further, according to a twelfth aspect of the present invention, the surface emitting laser element of the vertical cavity type in any one of the seventh to the ninth aspects is characterized in that at least a part of the first layer of the dielectric substance that is contacting to the contact layer is formed of a silicon nitride which has a composition ratio of nitrogen to be higher comparing to a stoichiometric composition.

Furthermore, according to a thirteenth aspect of the present invention, the surface emitting laser element of the vertical cavity type in any one of the seventh to the ninth aspects is characterized in that there is designed for the contact layer to have a thickness as not thicker than 50 nm, there is designed therefor to have the concentration of the acceptor as not lower than 10¹⁹ cm⁻³, and there is designed therefor to have a concentration of hydrogen as not higher than 10¹⁸ cm⁻³.

And therefore in accordance with the present invention, it becomes able to obtain the advantages that it becomes able to realize the surface emitting laser element of the vertical cavity type that has the threshold electrical current for emission therefrom as lower, because there is not formed any gutter at all on the contract layer at the part as directly under the gap which is formed at between the first layer of the dielectric substance and the electrode of the annular shape, and then because it becomes able to prevent from an increase of a resistance of the element.

The above and other objects, features, advantages and technical and industrial significance of this invention will be better understood by reading the following detailed description of presently preferred embodiments of the invention, when considered in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view exemplary showing a surface emitting laser element of a vertical cavity type regarding the first embodiment in accordance with the present invention.

FIG. 2 is an explanatory drawing showing a standing wave of a light and an electrical current path in accordance with the surface emitting laser element of the vertical cavity type as shown in FIG. 1.

FIG. 3 is an explanatory drawing showing a method of manufacturing the surface emitting laser element of the vertical cavity type as shown in FIG. 1.

FIG. 4 is an explanatory drawing showing the method of manufacturing the surface emitting laser element of the vertical cavity type as shown in FIG. 1.

FIG. 5 is an explanatory drawing showing the method of manufacturing the surface emitting laser element of the vertical cavity type as shown in FIG. 1.

FIG. 6 is an explanatory drawing showing the method of manufacturing the surface emitting laser element of the vertical cavity type as shown in FIG. 1.

FIG. 7 is an explanatory drawing showing the method of manufacturing the surface emitting laser element of the vertical cavity type as shown in FIG. 1.

FIG. 8 is a cross sectional view exemplary showing a surface emitting laser element of a vertical cavity type regarding the second embodiment in accordance with the present invention.

FIG. 9 is an explanatory drawing showing a standing wave of a light and an electrical current path in accordance with the surface emitting laser element of the vertical cavity type as shown in FIG. 8.

FIG. 10 is a cross sectional view exemplary showing a principal part of a surface emitting laser element of a vertical cavity type that has a conventional configuration.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter a couple of embodiments in accordance with the present invention will be described in detailed below, in reference to the corresponding drawings respectively. However, there will not be limited the present invention at all due to each of such the embodiments.

The First Embodiment

First of all, a surface emitting laser element of a vertical cavity type regarding the first embodiment in accordance with the present invention will be described in detail below. There is designed for the surface emitting laser element of the vertical cavity type in accordance with the present first embodiment to have an emission wavelength of a laser in a band of 1100 nm. Moreover, the same comprises a first layer of a dielectric substance and a second layer of a dielectric substance, that there is designed for an optical thickness in total thereof to be as approximately λ/4 in a case where there is assumed for the emission wavelength of the laser therefrom to be as (λ).

Here FIG. 1 is a cross sectional view for exemplary showing a surface emitting laser element of a vertical cavity type (100) in accordance with the present first embodiment. And then such the surface emitting laser element of the vertical cavity type (100) comprises a configuration of: a substrate (101); a DBR mirror at a lower side thereof (102) as a reflecting mirror of a multilayered film layer at the lower side thereof that is accumulated on the substrate (101); a buffer layer (103); a contact layer of an (n) type (104); an active layer (105) that comprises a multiple quantum well structure; a layer of composition to be inclined at a lower side thereof (106); an electrical current narrowing layer (107) that comprises an electrical current narrowing part (107 a) which is designed to be located at an outer circumference thereof, and an electrical current injection part (107 b) as a round shape which is designed to be located at a center of such the electrical current narrowing part (107 a); a layer of composition to be inclined at an upper side thereof (108); a spacer layer of a (p) type (109); a layer for an electrical current path of a (p⁺) type (110); another spacer layer of a (p) type (111); and then a contact layer of a (p⁺) type (112), that are accumulated in order one after the other thereunto, and that are shown in FIG. 1. Moreover, there are designed for each of at least from the active layer (105) through the contact layer of the (p⁺) type (112) to configure a mesa post (M1) as a post shape respectively.

Further, there is designed for the substrate (101) therein to be formed of a GaAs as undoped. Still further, there is designed for the DBR mirror at the lower side thereof (102) therein to be comprised of layers of GaAs/Al_(0.9)Ga_(0.1)As as 34 pairs thereof. Still further, there is designed for the contact layer of the (n) type (104) therein to be formed of a GaAs as an (n) type. Still further, there is designed for the active layer (105) therein to have a configuration in which there are designed for layers of a GaInNAs well with having the number of the layers as three and barrier layers of a GaAs with having the number of the layers as four to be accumulated one after the other. And then there is designed for a bottom layer in such the barrier layers of the GaAs to function as a cladding layer of an (n) type as well. Still further, regarding the electrical current narrowing layer (107), there is designed for the electrical current narrowing part (107 a) therein to be formed of an Al₂O₃, there is designed for the electrical current injection part (107 b) therein to have a diameter as between 6 μm and 7 μm and there is designed therefor to be formed of an AlAs. Still further, there are designed for each of the layer of composition to be inclined at the lower side thereof (106) therein and the layer of composition to be inclined at the upper side thereof (108) therein to be formed of an AlGaAs respectively, and there are designed for each thereof to be configured in order to increase a composition of the As therein as gradually in a direction of each of thicknesses thereof respectively, as getting closer to such the electrical current narrowing layer (107). Still further, there are designed for each of the spacer layer of the (p) type (109) therein and the other spacer layer of the (p) type (111) therein and the layer for the electrical current path of the (p⁺) type (110) therein and the contact layer of the (p⁺) type (112) therein to be formed of a GaAs as a (p) type with being doped carbon thereinto or to be formed of a GaAs as a (p⁺) type respectively. Still further, there is designed for a concentration of an acceptor or for that of a donor in each of the layers of the (p) type or in each of that of the (n) type to be as approximately 10¹⁸ cm⁻³ for instance. Still further, there is designed for a concentration of an acceptor in each of the layers of the (p⁺) type to be as not lower than approximately 10¹⁹ cm⁻³ for instance. Furthermore, there is designed for an index of refraction regarding each of the layers of the semiconductor to be as approximately 3.45 respectively, that are designed to be formed of the GaAs individually.

Moreover, there is designed for an electrode of an annular shape at a (p) side thereof (113) to be formed on to the contact layer of the (p⁺) type (112), in which there is designed therefor to have an open part (113 a) at a center thereof, there is designed therefor to have an outer circumference which corresponds to an outer circumference of the mesa post (M1), and there is designed therefor to comprise a multilayered structure of Pt/Ti. Further, there is designed for such the electrode of the annular shape at the (p) side thereof (113) to have an outer diameter as approximately 30 μm for instance. Furthermore, there is designed for such the an open part (113 a) thereat to be as approximately between 11 μm and 14 μm for instance.

Moreover, there is designed for a first layer of a dielectric substance (114) as a disk shape to be formed of a silicon nitride (SiN_(x)) at an inner side of the open part (113 a) of the electrode of the annular shape at the (p) side thereof (113). Furthermore, there is designed for a gap (121) to be formed with having a width of approximately between 0.3 μm and 0.5 μm for all over an outer circumference of the first layer of the dielectric substance (114) for between such the outer circumference of the first layer of the dielectric substance (114) and an internal circumference of the electrode of the annular shape at the (p) side thereof (113).

Moreover, there is designed for a second layer of a dielectric substrate (115) to be formed of an SiN_(x) in order to cover the first layer of the dielectric substance (114) and the gap (121), and then for an outer circumference thereof in order to reach on to the electrode of the annular shape at the (p) side thereof (113).

Further, there is designed for a DBR mirror at an upper side thereof (116) as a reflecting mirror of a multilayered film layer at an upper side thereof to be formed of a dielectric substance on to all over the part from the second layer of the dielectric substrate (115) to the outer circumference of the mesa post (M1). Still further, there is designed for such the DBR mirror at the upper side thereof (116) to be comprised of a multilayered structure of SiN_(x)/SiO₂ as between ten and twelve pairs thereof for instance. Or, there may be designed therefor to be comprised of a multilayered structure of such as α-Si/SiO₂ or α-Si/Al₂O₃ or the like with having the number of the individual pairs thereof to be designed in order to obtain as properly a ratio of reflection as approximately 99% with corresponding to an index of refraction of a material therefor as well respectively. Still further, there is designed for the contact layer of an (n) type (104) to be extended from a lower part of the mesa post (M1) toward an outer side in a radial direction thereof. And then there is designed for an electrode at an (n) side thereof (117) as a half annular shape to be formed on a surface thereof, and there is designed therefor to be comprised of a multilayered structure of such as AuGeNi/Au or the like. Still further, there is designed for such the electrode at the (n) side thereof (117) to have a dimension as approximately 82 μm for an outer diameter thereof and approximately 42 μm for an inner diameter thereof. Furthermore, there is designed for a passivation film layer (118) to be formed of a dielectric substance, such as an SiN_(x) or the like, at a region where there is not designed for any of the DBR mirror at the upper side thereof (116) to be formed at all, in order to protect a surface thereof.

Moreover, there is designed for an electrode at an (n) side thereof for deriving therefrom (119) to be formed of Au in order to contact to the electrode at the (n) side thereof (117) via an open part which is designed to be formed on the passivation film layer (118). Further, there is designed for an electrode at a (p) side thereof for deriving therefrom (120) to be formed of Au in order to contact to the electrode of the annular shape at the (p) side thereof (113) on the contrary thereto, via the open part which is designed to be formed on the passivation film layer (118). Furthermore, there is designed for each of the electrode at the (n) side thereof (117) and the electrode of the annular shape at the (p) side thereof (113) to be connected as electrically to an electrical current supply circuit that is designed to be provided at an outside thereof and that is not shown in any of the figures, by making use of the electrode at the (n) side thereof for deriving therefrom (119) and the electrode at the (p) side thereof for deriving therefrom (120) as corresponding thereto respectively.

Moreover, regarding such the surface emitting laser element of the vertical cavity type (100), in a case where there is applied a voltage to between the electrode at the (n) side thereof (117) and the electrode of the annular shape at the (p) side thereof (113) from the electrical current supply circuit, via the electrode at the (n) side thereof for deriving therefrom (119) and the electrode at the (p) side thereof for deriving therefrom (120) as corresponding thereto respectively, and then where there is injected an electrical current thereinto, there becomes to be flowed such the electrical current mainly through the contact layer of the (p⁺) type (112) and the layer for the electrical current path of the (p⁺) type (110) that individually have the resistances as lower. And then there becomes to be narrowed the electrical current path into an inner side of the electrical current injection part (107 b) due to the electrical current narrowing layer (107), and then thereby being supplied to the active layer (105) with a density of the electrical current as higher. As a result, such the active layer (105) becomes to be performed a carrier injection thereinto, and then the same becomes to emit a spontaneously emitted light. Further, there is designed for a light which has a wavelength of λ as an emission wavelength of a laser among the spontaneously emitted lights therefrom to be formed a standing wave in between the DBR mirror at the lower side thereof (102) and the DBR mirror at the upper side thereof (116), and then there is designed therefor to be amplified by making use of the active layer (105) therein. And then in a case where there becomes to be not lower than a value of a threshold for such the electrical current that is injected thereinto, the light which forms the standing wave therein becomes to perform a laser oscillation, and hence there becomes to be output a laser beam with having a band of 1100 nm from the open part (113 a) of the electrode of the annular shape at the (p) side thereof (113).

Next, the standing wave of the light and the electrical current path in accordance with such the surface emitting laser element of the vertical cavity type (100) will be described in detail below. Here FIG. 2 is an explanatory drawing for showing the standing wave of the light and the electrical current path in accordance with such the surface emitting laser element of the vertical cavity type (100).

First of all, the standing wave of the light in accordance with such the surface emitting laser element of the vertical cavity type (100) will be described in detail below. Here in accordance with FIG. 2, a line (L1) indicates a location in a multilayered structure from the active layer (105) through the second layer of the dielectric substance (115), and the same indicates an amplitude of the standing wave at the location therein. Moreover, there is designed for the spacer layer of the (p) type (109) therein and the other spacer layer of the (p) type (111) therein to be formed for the individual optical thicknesses thereof to be as λ/4 respectively. Further, there is designed for each of the first layer of the dielectric substance (114) therein and the second layer of the dielectric substance (115) therein to be formed for the optical thicknesses in total thereof to be as approximately λ/4 as well. And then there is designed for each of such the first layer of the dielectric substance (114) therein and such the second layer of the dielectric substance (115) therein to function as the layers for the phase adjustment respectively. Furthermore, it may be available to design such the optical thicknesses in total thereof to be as approximately λ/4, as it is not limited to a case where there is designed therefor to be as exactly λ/4 for convenience' sake of such as a optical design thereof or the like. As a result, regarding such the standing wave therein, there becomes to be located a loop (AN) approximately at the active layer (105) and at an upper face of the second layer of the dielectric substance (115), that is to say, at the bottom surface of the DBR mirror at the upper side thereof (116), and meanwhile, there becomes to be located a node (N) approximately at the electrical current narrowing layer (107) and at the layer for the electrical current path of the (p⁺) type (110) and at the contact layer of the (p⁺) type (112) on the contrary thereto, that are shown by making use of the line (L1) therein.

Moreover, there is determined for a specific layer thickness of the first layer of the dielectric substance (114) therein and of the second layer of the dielectric substance (115) therein to be as below with corresponding to the ratio of the composition therefor, due to the index of refraction of the SiN_(x) therein as different from each other with corresponding to the ratio of the composition therefor. And then in a case where there is designed for each of the first layer of the dielectric substance (114) therein and the second layer of the dielectric substance (115) therein to be formed of SiN_(x) in which the (x) is equal to 1.5 for both thereof for instance, the index of refraction (n) thereof is defined to be as 1.8. And then in a case where there is assumed for the emission wavelength of the laser (λ) to be as 1100 nm, there becomes determined for the layer thicknesses in total of such the first layer of the dielectric substance (114) therein and such the second layer of the dielectric substance (115) therein to be as 1100 divided by (4 times 1.8), that is to say, to be as approximately 152.8 nm. Or, in a case where there is designed for each of the first layer of the dielectric substance (114) therein and the second layer of the dielectric substance (115) therein to be formed of SiN_(x) in which the (x) is equal to 1.2 for both thereof for instance, the index of refraction (n) thereof is defined to be as 2.2. And then there becomes determined for the layer thicknesses in total of such the first layer of the dielectric substance (114) therein and such the second layer of the dielectric substance (115) therein to be as approximately 125 nm.

Next, the electrical current path in accordance with the surface emitting laser element of the vertical cavity type (100) will be described in detail below, with making use of FIG. 2. Here in accordance with such the surface emitting laser element of the vertical cavity type (100), there is designed for the second layer of the dielectric substance (115) to be formed in order to cover the gap (121). As a result, there is no probability of an occurrence of any erosion for the contract layer of the (p⁺) type (112) at all due to a trespass of an etching reagent thereinto from the gap (121) even in a case where there is designed for a process of an etching for the layer of the semiconductor therein such as at the process of the formation of the mesa post (M1) or the like, that will be described later. And therefore the electrical current that is injected from the electrode of the annular shape at the (p) side thereof (113) becomes to flow in parallel through both of the layer for the electrical current path of the (p⁺) type (110) and the contact layer of the (p⁺) type (112) that individually have the resistance as lower to be as the electrical current paths and that is arrowed by making use of the (Ar1) as shown therein, and then thereby being maintained the resistance of the element as lower as similar to that in accordance with the designing therefor. And then there becomes to be narrowed such the electrical current into the inner side of the electrical current injection part (107 b) due to the electrical current narrowing layer (107), and then thereby being supplied to the active layer (105) with the density of the electrical current as higher. As a result, there becomes to be reduced for the threshold electrical current for emission from such the surface emitting laser element of the vertical cavity type (100). Moreover, it is desirable for each of such the layer for the electrical current path of the (p⁺) type (110) and such the contact layer of the (p⁺) type (112) to have a layer thickness as not thicker than 50 nm respectively, in order to design for the both thereof to have the individual resistance as sufficiently lower, and in order not to give any effect as negatively on the standing wave of the light therefrom. Furthermore, it is further preferable for both thereof to have the individual layer thicknesses as between 15 nm and 30 nm in particular respectively.

And therefore in accordance with such the surface emitting laser element of the vertical cavity type (100), it becomes able to design for the threshold electrical current for emission therefrom to be reduced because there becomes to be performed the prevention against the increase of the resistance of such the element therein, that are described as above.

Next, a method of manufacturing the surface emitting laser element of the vertical cavity type (100) will be described in detail below. Here each of FIG. 3 through FIG. 7 is an explanatory drawing for showing one example of such the method of manufacturing the surface emitting laser element of the vertical cavity type (100) respectively.

First of all, there is designed to be performed the following processes of the accumulations on to the substrate (101) in order one after the other by making use of a method of an epitaxial growth for all thereof as shown in FIG. 3: accumulating the DBR mirror at the lower side thereof (102) thereunto; accumulating the buffer layer (103) thereunto; accumulating the contact layer of the (n) type (104) thereunto; accumulating the active layer (105) thereunto; accumulating the layer of composition to be inclined at the lower side thereof (106) thereunto; accumulating a layer to be oxidized (122) that is formed of an AlAs thereunto; accumulating the layer of composition to be inclined at the upper side thereof (108) thereunto; accumulating the spacer layer of the (p) type (109) thereunto; accumulating the layer for the electrical current path of the (p⁺) type (110) thereunto; accumulating the other spacer layer of the (p) type (111) thereunto; and then accumulating the contact layer of the (p⁺) type (112) thereunto. And then thereafter there is designed to be performed a process of forming the first layer of the dielectric substance (114) as the disk shape that is formed of the silicon nitride (SiN_(x)) at a part region of the contact layer of the (p⁺) type (112) by making use of a method of a chemical vapor deposition (CVD) therefor.

Next, there is designed to be performed a process of forming the electrode of the annular shape at the (p) side thereof (113) on to the contact layer of the (p⁺) type (112) by making use of a technology of a lift off, for the first layer of the dielectric substance (114) in order to be arranged at the inner side of the open part (113 a) thereof. Moreover, there is designed to be performed first of all a process of coating a photo resist (123) of a negative type on to the first layer of the dielectric substance (114) and on to the contact layer of the (p⁺) type (112) as more specifically thereto, and then thereafter there is designed to be performed a process of forming a pattern (P) as a shape of the electrode of the annular shape at the (p) side thereof (113), that are shown in FIG. 4. Furthermore, there is designed for such the pattern (P) thereunto to have a width as being widened with corresponding to a depth from a surface of such the photo resist (123) as deeper at a period of such the process thereof.

Next, there is designed to be performed a process of evaporating a layer of Ti and then a layer of Pt to have a multilayered structure of Pt/Ti from a point of view of an upper side of the photo resist (123), and then there is performed a process of forming the electrode of the annular shape at the (p) side thereof (113) on to the contact layer of the (p⁺) type (112) at the inner side of the pattern (P), that are shown in FIG. 5. And hence there becomes to be formed such the electrode of the annular shape at the (p) side thereof (113) with having a shape as similar to the shape of the pattern (P) on the top surface of the photo resist (123) at a period of such the process thereof. As a result, there becomes to be formed the gap (121) that has the width of approximately 0.3 μm and 0.5 μm for all over the outer circumference of the first layer of the dielectric substance (114) at between such the outer circumference of the first layer of the dielectric substance (114) and the internal circumference of the electrode of the annular shape at the (p) side thereof (113).

Next, there is designed to be performed a process of forming the second layer of the dielectric substance (115) to be formed of the SiN_(x) by making use of a method of a plasma CVD in order to cover the first layer of the dielectric substance (114) and the gap (121), that is shown in FIG. 6. Moreover, there is designed for such the second layer of the dielectric substance (115) not to cover completely the whole of the surface of the electrode of the annular shape at the (p) side thereof (113) at a period of such the process thereof, but therefor to be formed in order to expose the region (A1) at the outer circumference of such the electrode of the annular shape at the (p) side thereof (113).

Further, there is designed for such the second layer of the dielectric substance (115) to be formed, for the optical thicknesses in total of the first layer of the dielectric substance (114) and such the second layer of the dielectric substance (115) in order to become as approximately λ/4. Still further, there is determined for the specific layer thickness of the first layer of the dielectric substance (114) therein and of the second layer of the dielectric substance (115) therein to be determined with corresponding to the ratio of the composition therefor, due to the index of refraction of the SiN_(x) therein as different from each other with corresponding to such the ratio of the composition therefor that is described above.

Still further, there is contained some amount of hydrogen in the SiN_(x) therein at a period of the process of generating thereof in general. And then in a case where there is smaller for the ratio of the composition (x) of such the SiN_(x) that configures the first layer of the dielectric substance (114), there becomes to be higher for a density of such the SiN_(x) therein. And then thereby being restricted a movement of such the hydrogen to be contained therein in a case of a later process of performing a heat treatment therefor. And hence such the hydrogen becomes to intrude into the contact layer of the (p⁺) type (112), and then thereby giving rise to a case where there may become to be increased the electrical resistance thereof. Still further, in a case where there is larger for such the ratio of the composition (x) of the SiN_(x) therein on the contrary thereto, there becomes to be lower for a density of such the SiN_(x) therein. As a result, it becomes easier for such the hydrogen therein to get away from the surface thereof at the period of the process of performing the heat treatment therefor. And hence there becomes to be suppressed the intrusion of such the hydrogen into the contact layer of the (p⁺) type (112), and then thereby suppressing the increase of the electrical resistance thereof as well. And therefore it is desirable for the ratio of the composition (x) of such the SiN_(x) that configures the first layer of the dielectric substance (114) to be as larger at least at a part that is contacting to the contact layer of the (p⁺) type (112). That is to say, in a case where there is designed for the first layer of the dielectric substance (114) to comprise a configuration of a multilayered film layers for instance, it is desirable for the ratio of the composition (x) of the SiN_(x) that configures the layer which is contacting to the contact layer of the (p⁺) type (112) to be larger comparing other layers in such the multilayered film layers therein. Still further, it is desirable for such the ratio of the composition (x) thereof to be as larger comparing to a stoichiometric composition by which the (x) is equal to 1.33. Still further, it is desirable to be designed for the concentration of the acceptors in the contact layer of the (p⁺) type (112) to be as not lower than 10¹⁹ cm⁻³ and it is desirable to be designed for the concentration of such the hydrogen therein to be as not higher than 10¹⁸ cm⁻³ as well even in the case where there becomes to be occurred the intrusion of such the hydrogen into such the contact layer of the (p⁺) type (112), because such the contact layer of the (p⁺) type (112) becomes to function effectively as an electrical current path therefor. Furthermore, there is no limitation in particular regarding a ratio of a composition (x) of the SiN_(x) that configures the second layer of the dielectric substance (115) because such the second layer of the dielectric substance (115) has a face with an area as extremely smaller that contacts to the contact layer of the (p⁺) type (112). However, it is further desirable therefor to be designed as equivalent to that of the first layer of the dielectric substance (114) in particular from a point of view of an optical characteristic of such the surface emitting laser element of the vertical cavity type (100).

Next, there are designed for the following processes of: forming the mesa post (M1) by performing a process of etching for the layer of the semiconductor to a depth for reaching to the contact layer of the (n) type (104) with making use of such as an acid etching reagent or the like and with making use of the electrode of the annular shape at the (p) side thereof (113) as a metal mask therefor; forming another mask thereafter; and then performing a process of etching for the contact layer of the (n) type (104) to a depth for reaching to the buffer layer (103). As a result, it becomes able to obtain the configuration in which there becomes to be formed the mesa post (M1) that is shown in FIG. 7. Moreover, there is designed for the second layer of the dielectric substance (115) to be formed in order to cover the gap (121). And therefore there is no probability of the occurrence of any erosion for the contract layer of the (p⁺) type (112) at all due to the trespass of the acid etching reagent thereinto from the gap (121) in accordance with such the process of etching therefor. Further, there is designed for such the second layer of the dielectric substance (115) to be formed for the region (A1) at the outer circumference of the electrode of the annular shape at the (p) side thereof (113) in order to be exposed therefrom at the period of performing the process of forming such the second layer of the dielectric substance (115) as well. And therefore there is no probability of the occurrence of any protruding of the outer circumference of such the second layer of the dielectric substance (115) from such the outer circumference of the electrode of the annular shape at the (p) side thereof (113) either. As a result, it becomes able to design for such the outer circumference of the electrode of the annular shape at the (p) side thereof (113) and for the outer circumference of the mesa post (M1) to match with each other in an accuracy as higher.

Next, there is designed for performing the following processes of: performing a process of a heat treatment therefor in a water vapour atmosphere; and then performing a process of a selective oxidation for the layer to be oxidized (122) from the side of the outer circumference of the mesa post (M1). And then there becomes to be occurred a chemical reaction of (4 AlAs+6 H₂O—>2 Al₂O₃+4 AsH₃) in such the layer to be oxidized (122). And then thereby becoming the AlAs therein oxidized to be Al₂O₃ from a side of an outer circumference of the layer to be oxidized (122), and hence there becomes to be formed the electrical current narrowing part (107 a) therein. Moreover, there is progressed such the above mentioned chemical reaction therein as uniformly from the side of the outer circumference of such the layer to be oxidized (122). And hence there becomes to be formed the electrical current injection part (107 b) that is formed of AlAs at the center thereof. Further, there is designed for such the electrical current injection part (107 b) here to have a diameter of approximately between 6 μm and 7 μm, by performing a control of such as an amount of time for performing the process of the heat treatment therefor or the like. And then because there is designed to be formed such the electrical current injection part (107 b) therein, it becomes able to design for a center of such the mesa post (M1) therein and for a center of such the electrical current injection part (107 b) therein and also for a center of the open part (113 a) of such the electrode of the annular shape at the (p) side thereof (113) therein to match with each other in an accuracy as higher. As a result, it becomes able to design for such the surface emitting laser element of the vertical cavity type (100) to be a laser having a single transverse mode with a yield rate of manufacturing therefor as further higher.

Further, there becomes to be dispersed the AsH₃ therefrom which is generated due to the chemical reaction that is mentioned above. And then such the AsH₃ which is dispersed therefrom becomes to occur a chemical reaction of (Pt+2 AsH₃—>PtAs₂+3 H₂) with the Pt which is contained in the electrode of the annular shape at the (p) side thereof (113) at the region (A1) that is the exposed part of the electrode of the annular shape at the (p) side thereof (113) therein. As a result, there becomes to be occurred a deterioration for such the electrode of the annular shape at the (p) side thereof (113) at the region (A1) that is the exposed part thereof, and then thereby increasing the electrical resistance thereof. While, the other regions thereof where there is covered by the second layer of the dielectric substance (115) is protected from such the deterioration on the contrary thereto, and then thereby maintaining the electrical resistance thereof as lower.

Next, there is designed for performing a process of forming the electrode at the (n) side thereof (117) as the half annular shape on to the surface of the contact layer of the (n) type (104) at the side of the outer circumference of the mesa post (M1). And then thereafter there is designed for performing a process of forming the passivation film layer (118) on to whole of the surface thereof. Moreover, there is designed for performing thereafter a process of forming each of the open parts at the passivation film layer (118) and at the second layer of the dielectric substance (115) on the electrode at the (n) side thereof (117) and on the electrode of the annular shape at the (p) side thereof (113) respectively. Furthermore, there are designed for performing thereafter processes of forming the electrode at the (n) side thereof for deriving therefrom (119) that is designed to be contacted to the electrode at the (n) side thereof (117) and forming the electrode at the (p) side thereof for deriving therefrom (120) that is designed to be contacted to the electrode of the annular shape at the (p) side thereof (113), via each of such the open parts thereon respectively.

Next, there is designed for performing thereafter a process of forming the DBR mirror at the upper side thereof (116) by making use of the method of the CVD therefor. And then thereafter there is designed for performing a process of polishing for a rear surface of the substrate (101), and then thereby adjusting the thickness of such the substrate (101) to be as approximately 150 μm for instance. Moreover, there is designed for performing thereafter a process of separating the element from each other. And hence there becomes to be completed such the surface emitting laser element of the vertical cavity type (100) that is shown in FIG. 1.

Next, there is performed a manufacturing of a surface emitting laser element of the vertical cavity type that has a configuration as shown in FIG. 1 in accordance with the method of manufacturing which is described above, as an example in accordance with the present invention. And then in such the case thereof, there are made use of a substance with having a ratio of a composition (x) for which the (x) is equal to 1.33 (Example 1) and of another substance with having a ratio of a composition (x) for which the (x) is equal to 1.5 (Example 2) for each of the SiN_(x) that individually configure the first layer of the dielectric substance and the second layer of the dielectric substance respectively. While, as a comparative example thereof on the contrary thereto, there is performed a manufacturing of another surface emitting laser element of the vertical cavity type by following a method of manufacturing as almost similar to the method of manufacturing that is described above, however, in which there is performed a formation of a first layer of a dielectric substance therein that is formed of the SiN_(x) for which the (x) is equal to 1.33 and that has an optical thickness to be as λ/4, and then in which there is not performed a formation of any second layer of a dielectric substance at all therein.

Moreover, there is performed an measurement of a resistance of each of such the elements in accordance with such the individual surface emitting laser elements of the vertical cavity type respectively. And then as a result, there becomes to be obtained 100 Ω for the element in accordance with the comparative example, meanwhile, there becomes to be obtained 80 Ω for the element in accordance with Example 1 on the contrary thereto, and there becomes to be obtained 70 Ω for the element in accordance with Example 2 on the contrary thereto as well. That is to say, it is considered that the second layer of the dielectric substance in the element in accordance with Example 1 becomes to prevent the contact layer of the (p⁺) type from the occurrence of any erosion therein, and then as a result, thereby becoming reduced the resistance of such the element as lower comparing to that in accordance with the comparative example in which there is not formed any second layer of any dielectric substance at all therein. Further, it is considered that in addition to such an advantage of the second layer of the dielectric substance in the element in accordance with Example 2 for preventing from the occurrence of any erosion therein, there is prevented the hydrogen which is contained in the first layer of the dielectric substance and/or in the second layer of the dielectric substance from intruding into the contact layer of the (p⁺) type, and then as a result, thereby becoming reduced the resistance of such the element as further lower on the contrary thereto. Furthermore, it becomes able to expect other advantages of such as improving a property of an impedance matching regarding a high frequency property and of releasing a limitation of a band due to a capacitance component therein and a resistance component therein (CR) and the like from each of such the surface emitting laser elements of the vertical cavity type in accordance with Example 1 and Example 2 as well respectively, that are individually caused due to a reflection of such the reducing of the resistance of each of the elements respectively.

The Second Embodiment

Next, a surface emitting laser element of a vertical cavity type regarding the second embodiment in accordance with the present invention will be described in detail below. There is designed for the surface emitting laser element of the vertical cavity type in accordance with the present second embodiment to have an emission wavelength of a laser in a band of 1100 nm, which is similar to that of the surface emitting laser element of the vertical cavity type in accordance with the first embodiment. However, there is a point that there is designed for a second layer of a dielectric substance to be a part of a reflecting mirror of a multilayered film layer at an upper side thereof, which is different from that in accordance with the first embodiment.

Here FIG. 8 is a cross sectional view for exemplary showing a surface emitting laser element of a vertical cavity type (200) regarding the present second embodiment. Moreover, there is designated by making use of a same symbol for a part as similar to that in accordance with the surface emitting laser element of the vertical cavity type (100) that is shown in FIG. 1. Further, there is designed for such the surface emitting laser element of the vertical cavity type (200) to comprise a configuration as shown in FIG. 8 which is almost similar to that in accordance with the surface emitting laser element of the vertical cavity type (100). However, there is designed for a first layer of a dielectric substance (214) as a disk shape that is formed at the inner side of the open part (113 a) of the electrode of the annular shape at the (p) side thereof (113) to comprise a configuration of a multilayered film layers structure in which there is designed to be accumulated a layer of a dielectric substance at a lower side thereof (214 a) that is formed of an SiN_(x) and a layer of a dielectric substance at an upper side thereof (214 b) that is accumulated on to the layer of the dielectric substance at the lower side thereof (214 a) and that is formed of an SiO₂, that are different from that in accordance with the surface emitting laser element of the vertical cavity type (100) respectively. Furthermore, there is designed such the layer of the dielectric substance at the lower side thereof (214 a) to be formed for an optical thickness thereof to be as approximately λ/4.

Moreover, there is designed for a gap (221) to be formed with having a width of approximately between 0.3 μm and 0.5 μm for all over an outer circumference of the first layer of the dielectric substance (214) at between such the outer circumference of the first layer of the dielectric substance (214) and the internal circumference of the electrode of the annular shape at the (p) side thereof (113). Further, there is designed for a second layer of a dielectric substrate (215) to be formed of an SiN_(x) in order to cover the first layer of the dielectric substance (214) and the gap (221), and then for an outer circumference thereof in order to reach on to the electrode of the annular shape at the (p) side thereof (113).

Still further, there is designed for a multilayered film layer at an upper side thereof (216) to be formed of a dielectric substance on to all over the part from the second layer of the dielectric substrate (215) to the outer circumference of the mesa post (M1). Furthermore, there is designed for such the multilayered film layer at the upper side thereof (216) to be comprised of a multilayered structure of SiN_(x)/SiO₂ as between ten and twelve pairs thereof for instance.

Next, the standing wave of the light and the electrical current path in accordance with such the surface emitting laser element of the vertical cavity type (200) will be described in detail below. Here FIG. 9 is an explanatory drawing for showing the standing wave of the light and the electrical current path in accordance with such the surface emitting laser element of the vertical cavity type (200).

First of all, the standing wave of the light in accordance with such the surface emitting laser element of the vertical cavity type (200) will be described in detail below. Here in accordance with FIG. 9, a line (L2) indicates a location in a multilayered structure from the active layer (105) through the second layer of the dielectric substance (215), and the same indicates an amplitude of the standing wave at each of the locations therein respectively. Moreover, there is designed for the layer of the dielectric substance at the upper side thereof (214 b) and the second layer of the dielectric substrate (215) and the multilayered film layer at the upper side thereof (216) in accordance with such the surface emitting laser element of the vertical cavity type (200) to comprise a DBR mirror at an upper side thereof, and then there is designed for a lower face of the layer of the dielectric substance at the upper side thereof (214 b) to be as a bottom surface of such the DBR mirror at the upper side thereof. That is to say, there are designed for the layer of the dielectric substance at the upper side thereof (214 b) and for the second layer of the dielectric substrate (215) to configure one pair of a bottom part of such the DBR mirror at the upper side thereof. Further, there is designed for the layer of the dielectric substance at the lower side thereof (214 a) therein to be formed for the optical thicknesses thereof to be as approximately λ/4, and then there is designed therefor to function as the layer for the phase adjustment as well. As a result, regarding such the standing wave therein, there becomes to be located a loop (AN) approximately at the active layer (105) and at the lower face of the layer of the dielectric substance at the upper side thereof (214 b), that is to say, at the bottom surface of the DBR mirror at the upper side thereof, meanwhile, there becomes to be located a node (N) approximately at the electrical current narrowing layer (107) and at the layer for the electrical current path of the (p⁺) type (110) and at the contact layer of the (p⁺) type (112) on the contrary thereto, that are shown by making use of the line (L2).

Next, the electrical current path in accordance with the surface emitting laser element of the vertical cavity type (200) will be described in detail below. Here in accordance with such the surface emitting laser element of the vertical cavity type (200), there is designed for the second layer of the dielectric substance (215) to be formed in order to cover the gap (221). As a result, the electrical current that is injected from the electrode of the annular shape at the (p) side thereof (113) becomes to flow in parallel through both of the layer for the electrical current path of the (p⁺) type (110) and the contact layer of the (p⁺) type (112) that individually have the resistance as lower to be as the electrical current paths and that is arrowed by making use of the (Ar2) as shown therein, and then thereby being maintained the resistance of the element as lower as similar to that in accordance with the designing therefor. As a result, there becomes to be reduced for the threshold electrical current for emission from such the surface emitting laser element of the vertical cavity type (200).

Furthermore, it is able to manufacture such the surface emitting laser element of the vertical cavity type (200) by making use of a method therefor as similar to that in accordance with the method of manufacturing the surface emitting laser element of the vertical cavity type (100) that is described above.

And therefore in accordance with such the surface emitting laser element of the vertical cavity type (200), it becomes able to design for the threshold electrical current for emission therefrom to be reduced because there becomes to be performed the prevention against the increase of the resistance of such the element, that are described above.

Moreover, there is designed to be formed of the AlAs for the layer to be oxidized in accordance with each of the embodiments that are described above, however, there may be designed therefor to be formed of an Al_(1-x)Ga_(x)As (0<x<1) as well. And then in the case where there is designed for such the layer to be oxidized therein to be formed of the Al_(1-x)Ga_(x)As, there becomes to be designed for an electrical current narrowing part in such an electrical current narrowing layer to be formed of an (Al_(1-x)Ga_(x))₂O₃ and for an electrical current injection part therein to be formed of the Al_(1-x)Ga_(x)As.

Further, there is designed for the electrode of the annular shape at the (p) side thereof to be formed by making use of the method of the lift off in accordance with each of the embodiments that are described above, however, there is not limited in particular regarding a method of performing the formation of such the electrode of the annular shape at the (p) side thereof at all. And then even in a case where there is designed for an electrode of an annular shape at a (p) side thereof to be formed by making use of any other method therefor, there becomes to be formed a gap for between such the electrode of the annular shape at the (p) side thereof and a first layer of a dielectric substance due to a difference of the materials thereof from each other. And therefore it becomes able to apply the present invention thereto, and then it becomes able to obtain such the advantages therefrom.

Furthermore, there is designed for the layers for the electrical current path therein that include the contact layer to be formed as two layers in accordance with each of the embodiments that are described above, however, it is able to obtain the advantages in accordance with the present invention even in a case where there is designed for such a layer for an electrical current path to be comprised of only a contact layer, or in the other case where there is designed therefor to be comprised of not less than three layers therefor as well.

Although the invention has been described with respect to specific embodiments for a complete and clear disclosure, appended claims are not to be thus limited but are to be construed as embodying all modifications and alternative constructions that may occur to one skilled in the art that fairly fall within the basic teaching herein set forth. 

1. A method of manufacturing a surface emitting laser element of a vertical cavity type, comprising the steps of: applying a process of accumulations on a substrate, said process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to said substrate, and accumulating layers of a semiconductor as a plurality thereof on to said reflecting mirror of said multilayered film layer at said lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of said first layer of said dielectric substance at a part of regions on said contact layer; forming an electrode of an annular shape as a process of a formation of said electrode of said annular shape on said contact layer, that has an open part at a center thereof, in order to be arranged for said first layer of said dielectric substance at an inner side of said open part thereat; forming a second layer of a dielectric substance as a process of a formation of said second layer of said dielectric substance in order to cover said first layer of said dielectric substance and to cover a gap which is formed between said first layer of said dielectric substance and said electrode of said annular shape; and etching said layers of said semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of said mesa post with making use of said electrode of said annular shape to be as a mask therefor.
 2. The method of manufacturing the surface emitting laser element of the vertical cavity type according to claim 1, comprising the additional step of: forming a reflecting mirror of a multilayered film layer at an upper side thereof on to said second layer of said dielectric substance, that is formed of a dielectric substance, as a process of a formation of said reflecting mirror of said multilayered film layer at said upper side thereof after performing said process of said formation of said mesa post, wherein there is designed for said first layer of said dielectric substance and for said second layer of said dielectric substance to be formed so that have an optical thickness in total thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ) in accordance with said process of said formation of said first layer of said dielectric substance and with said process of said formation of said second layer of said dielectric substance.
 3. The method of manufacturing the surface emitting laser element of the vertical cavity type according to claim 1, comprising the additional step of: forming a reflecting mirror of a multilayered film layer at an upper side thereof as a process of a formation of said reflecting mirror of said multilayered film layer at said upper side thereof by performing an accumulation of said multilayered film layer at said upper side thereof, that is formed of a dielectric substance, that is comprised of said multilayered film layer at said upper side thereof and said second layer of said dielectric substance, and that there is designed for a layer of a dielectric substance at an upper side thereof to be as a bottom layer, on to said second layer of said dielectric substance after performing said process of said formation of said mesa post, wherein there is designed for said first layer of said dielectric substance in accordance with said process of said formation of said first layer of said dielectric substance to be formed so that comprises a multilayered structure of a layer of a dielectric substance at a lower side thereof and said layer of said dielectric substance at said upper side thereof, and so that there is designed for said dielectric substance at said lower side thereof to have an optical thickness thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ).
 4. The method of manufacturing the surface emitting laser element of the vertical cavity type according to one of claims 1 to 3, wherein said process of said accumulations includes a process of an accumulation of a layer to be oxidized in order to accumulate said layer to be oxidized that is formed of an AlAs or an Al_(1-x)Ga_(x)As (0<x<1) for between said contact layer and said active layer, and the same includes a process of a formation of an electrical current narrowing layer in order to form said electrical current narrowing layer that comprises an electrical current injection part which is formed of said AlAs or said Al_(1-x)Ga_(x)As and that comprises an electrical current narrowing part which is formed of an Al₂O₃ or an (Al_(1-x)Ga_(x))₂O₃, by performing a process of a selective oxidizing heat treatment for said layer to be oxidized that is performed said accumulation, after performing said process of said formation of said mesa post.
 5. The method of manufacturing the surface emitting laser element of the vertical cavity type according to claim 4, wherein said process of said accumulations includes a process of an accumulation of a layer for an electrical current path in order to accumulate said layer for said electrical current path between said contact layer and said layer to be oxidized, that has a concentration of an acceptor which is approximately equivalent to that in said contact layer.
 6. The method of manufacturing the surface emitting laser element of the vertical cavity type according to one of claims 1 to 3, wherein at least a part of said first layer of said dielectric substance that is contacting to said contact layer is formed of a silicon nitride which has a composition ratio of nitrogen to be higher comparing to a stoichiometric composition.
 7. A surface emitting laser element of the vertical cavity type, comprising: a substrate; a reflecting mirror of a multilayered film layer at a lower side thereof that is accumulated on said substrate; layers of a semiconductor as a plurality thereof, that are accumulated on said reflecting mirror of said multilayered film layer at said lower side thereof, that comprises a structure of a mesa post, and that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; an electrode of an annular shape that is formed on said contact layer, that has an open part at a center thereof, and that has an outer circumference which corresponds to an outer circumference of said structure of said mesa post; a first layer of a dielectric substance at an inner side of said open part of said electrode of said annular shape on said contact layer; and a second layer of a dielectric substance in order to cover said first layer of said dielectric substance and to cover a gap which is formed between said first layer of said dielectric substance and said electrode of said annular shape.
 8. The surface emitting laser element of the vertical cavity type according to claim 7, further comprising: a reflecting mirror of a multilayered film layer at an upper side thereof, that is formed on said second layer of said dielectric substance, and that is formed of a dielectric substance, wherein there is designed for said first layer of said dielectric substance and for said second layer of said dielectric substance to have an optical thickness in total thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ).
 9. The surface emitting laser element of the vertical cavity type according to claim 7, further comprising: a multilayered film layer at an upper side thereof, that is formed on said second layer of said dielectric substance, and that is formed of a dielectric substance, wherein there is designed for said first layer of said dielectric substance to comprise a multilayered structure of a layer of a dielectric substance at a lower side thereof and a layer of a dielectric substance at an upper side thereof, and there is designed for said layer of said dielectric substance at said lower side thereof to have an optical thickness thereof as approximately λ/4 in a case where there is assumed for a preferred emission wavelength of a laser to be as (λ), and said multilayered film layer at said upper side thereof and said second layer of said dielectric substance and said layer of said dielectric substance at said upper side thereof configure a reflecting mirror of a multilayered film layer at an upper side thereof, in which there is designed for said layer of said dielectric substance at said upper side thereof to be as a bottom layer therein.
 10. The surface emitting laser element of the vertical cavity type according to one of claims 7 to 9, wherein there is designed for said layers of said semiconductor as a plurality thereof to provide an electrical current narrowing layer that comprises an electrical current injection part which is formed of an AlAs or an Al_(1-x)Ga_(x)As (0<x<1) and that comprises an electrical current narrowing part which is formed of an Al₂O₃ or an (Al_(1-x)Ga_(x))₂O₃, that are formed by performing a process of a selective oxidizing heat treatment for between said active layer and said contact layer.
 11. The surface emitting laser element of the vertical cavity type according to claim 10, wherein there is designed for said layers of said semiconductor as a plurality thereof to provide a layer for an electrical current path between said electrical current narrowing layer and said contact layer, that has a concentration of an acceptor which is approximately equivalent to that in said contact layer.
 12. The surface emitting laser element of the vertical cavity type according to one of claims 7 to 9, wherein at least a part of said first layer of said dielectric substance that is contacting to said contact layer is formed of a silicon nitride which has a composition ratio of nitrogen to be higher comparing to a stoichiometric composition.
 13. The surface emitting laser element of the vertical cavity type according to one of claims 7 to 9, wherein there is designed for said contact layer to have a thickness as not thicker than 50 nm, there is designed therefor to have said concentration of said acceptor as not lower than 10¹⁹ cm⁻³, and there is designed therefor to have a concentration of hydrogen as not higher than 10¹⁸ cm⁻³. 